PART |
Description |
Maker |
W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond http://
|
K9F5616Q0B/K9F5616U0B |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
MC-242452F9-B10-BT3 MC-242452F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MR27T25603L-XXXTM MR27T25603L |
16M-Word x 16-Bit or 32M-Word x 8-Bit P2ROM
|
OKI[OKI electronic componets]
|
HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MBM29PL160BD-90PF MBM29PL160BD-90PFTN MBM29PL160BD |
16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 Modular Connector 122 x 32 pixel format, LED Backlight available
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
UPD23C32340GZ-XXX-MJH UPD23C32380GZ-XXX-MJH UPD23C |
32M-bit (4M-wordx8-bit/2M-wordx16-bit) Mask ROM
|
NEC
|
UPD23C32040ALGY-XXX-MJH UPD23C32080ALGY-XXX-MJH UP |
32M-bit (4M-wordx8-bit/2M-wordx16-bit) Mask ROM
|
NEC
|
UPD23C32000ALGY-XXX-MJH UPD23C32000ALGY-XXX-MKH UP |
32M-bit (4M-wordx8-bit/2M-wordx16-bit) Mask ROM
|
NEC
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|